EFFECT OF PLASMA AND THERMAL ANNEALING ON CHEMICAL-VAPOR-DEPOSITION DIELECTRICS GROWN USING SIH4-H2O2 GAS-MIXTURES

Authors
GAILLARD F BRAULT P BROUQUET P
Citation
F. Gaillard et al., EFFECT OF PLASMA AND THERMAL ANNEALING ON CHEMICAL-VAPOR-DEPOSITION DIELECTRICS GROWN USING SIH4-H2O2 GAS-MIXTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2478-2484
Citations number
17
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
5
Year of publication
1997
Pages
2478 - 2484
Database
ISI
SICI code
0734-2101(1997)15:5<2478:EOPATA>2.0.ZU;2-F
Abstract
Silicon dioxide has been deposited at low pressure (1 Torr) and low su bstrate temperature (0 degrees C) by chemical vapor deposition (CVD) u sing SiH4 and hydrogen peroxide (H2O2) concentrated at 30% or 60%. The effect of solution concentration on film properties has been investig ated: characterization of the deposited films has been carried out by ex situ Fourier transform infrared spectroscopy, ellipsometry, and mec hanical stress measurements. For shallow trench isolation applications , the physical and electrical properties of the CVD oxide must be clos e to those of a thermal oxide. Such properties can be obtained by in s itu annealing. (C) 1997 American Vacuum Society.