IN-SITU MONITORING AND CHARACTERIZATION OF SIC INTERFACE FORMED IN CARBON-FILMS GROWN BY PULSED-LASER DEPOSITION

Very thin, smooth, and uniform carbon films have been produced by abla ting a pyrolytic graphite target using an ultraviolet pulsed excimer l aser at fixed energy in an ultrahigh vacuum system. The films were dep osited on a Si (111) surface at room temperature. The deposition proce ss is investigated in situ by analyzing the time evolution of spectra obtained by Auger electron, x-ray photoelectron, and electron energy l oss spectroscopies at different stages of the film growth. A relations hip of the atomic concentration of Si and C with the number of laser p ulses and film thickness is obtained from the spectra. A SIG: interfac e with a thickness between one and two monolayers is observed to be fo rmed during the very first deposition pulses. The study of this SC buf fer layer is particularly relevant when a carbon film is used as a har d coating, where strong adhesion of the film to the substrate is requi red. (C) 1997 American Vacuum Society.