J. Vizoso et al., MODEL FOR HYDROGEN DESORPTION IN SIGE(100) FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2693-2697
Citations number
17
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
A model to describe hydrogen desorption from SiGe(100) that takes into
account the nature of the surface bonding is presented. It is based o
n the presence of three dimer types in the SiGe(100) surface (Si-Si, G
e-Ge, and Si-Ge), in which there is a thermodynamic preference of hydr
ogen atoms to pair up before the desorption reaction. The desorption k
inetics are, therefore, assumed to be controlled by the population of
paired hydrogens in the three dimer types, according to a first-order
law. It is also assumed that diffusion, which tends to drive the occup
ancy of hydrogen atoms in the dimers towards the thermodynamic equilib
rium distribution, is not instantaneous. The comparison with experimen
tal results shows that desorption is a diffusion limited process. (C)
1997 American Vacuum Society.