SPUTTERED CU CO FILMS FOR GIANT MAGNETORESISTANCE - EFFECT OF PLASMA GAS AND ANNEALING TREATMENT/

Sputtered Co/Cu films were deposited on silicon either directly, using an argon plasma, or through an intermediate step involving the deposi tion of CoN/Cu3N by reactive sputtering in a nitrogen plasma. The nitr ide composite was pyrolyzed to release the nitrogen. The effect of pre paration route and different annealing treatments on the resistivity o f these films as a function of magnetic field and temperature was esta blished. As in previous studies particle size is of primary importance in determining the giant magnetoresistance (GMR) characteristics of a film; thus optimizing the magnitude of the GMR effect requires close control of the duration and temperature of annealing treatments. The m icrostructure of these films was examined by means of atomic force mic roscopy. The intermediate nitride step produced a film in which the GM R effect was degraded apparently through the inclusion of voids that a re not eliminated in the pyrolysis stage. (C) 1997 American Vacuum Soc iety.