MODELING OF SMALL-SIZE MOSFETS WITH REVERSE SHORT-CHANNEL AND NARROW WIDTH EFFECTS FOR CIRCUIT SIMULATION

Authors
CHENG YH SUGII T CHEN K HU CM
Citation
Yh. Cheng et al., MODELING OF SMALL-SIZE MOSFETS WITH REVERSE SHORT-CHANNEL AND NARROW WIDTH EFFECTS FOR CIRCUIT SIMULATION, Solid-state electronics, 41(9), 1997, pp. 1227-1231
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
9
Year of publication
1997
Pages
1227 - 1231
Database
ISI
SICI code
0038-1101(1997)41:9<1227:MOSMWR>2.0.ZU;2-A
Abstract
Modeling of small size MOSFETs and experimental verification of the mo del using devices with varying pocket implant processes are presented. The results show thar the model can well describe reverse short chann el and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12 mu m regime. (C) 1997 Elsevier Science Ltd.