ANALYTICAL MODELING OF THE SUBSTRATE INFLUENCES ON ACCUMULATION-MODE SOI PMOSFETS AT ROOM-TEMPERATURE AND AT LIQUID-NITROGEN TEMPERATURE

Authors
PAVANELLO MA MARTINO JA COLINGE JP
Citation
Ma. Pavanello et al., ANALYTICAL MODELING OF THE SUBSTRATE INFLUENCES ON ACCUMULATION-MODE SOI PMOSFETS AT ROOM-TEMPERATURE AND AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 41(9), 1997, pp. 1241-1246
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
9
Year of publication
1997
Pages
1241 - 1246
Database
ISI
SICI code
0038-1101(1997)41:9<1241:AMOTSI>2.0.ZU;2-5
Abstract
In this work a theoretical and experimental analysis of the substrate potential drop influence on fully depleted accumulation-mode p-channel silicon-on-insulator (SOI) MOSFETs at room temperature and at liquid nitrogen temperature is presented. A new model to account for the subs trate influence into the accumulation-mode device conduction mechanism s is developed. The theoretical results are compared with MEDICI numer ical bidimensional simulations in order to validate the proposed model . The substrate influence on the SOI MOSFET threshold voltages is give n. Finally, a comparison between modeled and experimental data is real ized. (C) 1997 Elsevier Science Ltd.