THE TEMPERATURE-DEPENDENCE OF 1 F NOISE IN INP/

Citation
Xy. Chen et al., THE TEMPERATURE-DEPENDENCE OF 1 F NOISE IN INP/, Solid-state electronics, 41(9), 1997, pp. 1269-1275
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
41
Issue
9
Year of publication
1997
Pages
1269 - 1275
Database
ISI
SICI code
0038-1101(1997)41:9<1269:TTO1FN>2.0.ZU;2-X
Abstract
Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 10(4) kHz at temperatures from 77 to 500 K. The exp erimental results show that 1/f noise stems from the lattice scatterin g. The 1/f noise in InP is well characterised by a parameter alpha(Lat t) in this temperature range. The temperature dependence of alpha(Latt ) was determined experimentally. Assuming that the number of phonons i n a mode fluctuates with a 1/f spectrum, we are able to derive a theor etical expression for alpha(Latt) in terms of the contributions by the acoustic phonons and the polar optical phonons. At low temperatures ( < 200 K), the temperature dependence of alpha(Latt) can be analysed by this model with two kinds of phonons. However, at temperatures above 200 K, the model does not lead to satisfactory results. (C) 1997 Elsev ier Science Ltd.