DEFINITION OF EFFECTIVE CHANNEL-LENGTH (L-EFF) IN DEEP-SUBMICRON MOSFETS BASED ON NUMERICALLY SIMULATED SURFACE-POTENTIAL

A new definition of L-eff which agrees well with electrical measuremen ts using the channel resistance method is proposed, based on numerical ly simulated surface potential. Using the L-eff definition, the physic s underlying the fact that L-eff can be considerably longer than the m etallurgical channel length L-eff is explored, and the independence of L-eff On substrate bias V-sub is clarified. The gate bias dependence of L-eff in LDD MOSFET is clearly reflected by the proposed L-eff defi nition. (C) 1997 Elsevier Science Ltd.