SURFACE PHOTOABSORPTION MONITORING OF THE GROWTH OF GAAS AND INGAAS AT 650-DEGREES-C BY MOCVD

By monitoring the cyclic behavior of surface photoabsorption (SPA) ref lectance changes during the growth of GaAs at 650 degrees C and with s ufficient H-2 purging time between the supply of trimethylgallium and AsH3, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence (PL) m easurements, the possibility of growing highly accurate quantum well h eterostructures by metalorganic chemical vapor deposition at conventio nal growth temperatures. We also present our PL measurements on the In GaAs single quantum wells grown at this temperature by monitoring the SPA signal.