TRISNEOPENTYLGALLIUM AS A PRECURSOR FOR ATOMIC LAYER EPITAXY OF GAAS

We report the use of anew precursor, trisneopentylgallium (NPG) far th e growth of GaAs by atomic layer epitaxy (ALE). In contrast to most ot her alkyl gallium precursors such as triethylgallium, which decompose via a beta-hydride elimination mechanism, this compound undergoes homo lysis is similar to that of trimethylgallium (TMGa), the normal choice as an ALE precursor. Clear self-limiting growth behavior similar to t hat of TMGa was observed over a reasonably wide range of growth condit ions (430-500 degrees C). Carbon incorporation was not significantly r educed compared with TMGa suggesting that the adsorbed neopentyl radic als undergo decomposition to result in a methyl terminated surface ide ntical to that obtained for growth with TMGa.