K. Yong et al., THE MORPHOLOGY OF CDTE DEPOSITED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY - THE EFFECT OF SUBSTRATE MISORIENTATION, Journal of electronic materials, 26(10), 1997, pp. 1261-1264
Substrate misorientation and growth temperature influence the morpholo
gy of CdTe epilayers grown by organometallic vapor phase homoepitaxy.
These effects were investigated by using CdTe{100} and CdTe{100} misor
iented by 2, 4, 6, and 8 degrees toward <111>(Te) as substrates for gr
owth in the temperature range from 337 to 425 degrees C. Low angle pyr
amidal facets appeared on films grown on the CdTe(100) surface. The nu
mber density of these pyramidal facets decreased to zero as the substr
ate misorientation angle increased to 4 degrees. At higher misorientat
ion angles, low angle protrusions, resembling fish scales, appeared on
the surface. When the temperature was increased, facet size decreased
but facet density increased. The film morphology at the high misorien
tations, however, improved remarkably with increasing temperature. Cro
ss-sectional transmission electron microscopy provided evidence that b
oth the faceted CdTe films and films with a mirror-like finish were ep
itaxial single crystals with no planar defects. Schwoebel barriers are
suggested as the reason for the faceting of the surface grown on CdTe
{100}.