Quantum well infrared photodetectors (QWIP) have been developed rapidl
y and large QWIP arrays with 256 x 256 and 640 x 480 elements have bee
n demonstrated. But they all use quantum well structures that consist
of 30-50 periods which have a relatively small conversion efficiency d
ue to the small optical gain. In this paper, a high performance quantu
m well infrared photodetector consisting of only three quantum wells i
s presented which shows very large conversion efficiencies up to 29% a
t a bias voltage -0.8 V and peak wavelength 8.5 mu m. A high strain tw
o-stack, two-color QWIP consists of three wells in each stack is also
presented here for MWIR and LWIR detection. The MWIR stack has employe
d 35% of indium in the InGaAs well which not only achieved peak wavele
ngth at 4.3 mu m, but also obtained very high peak responsivity of 0.3
7 A W-1. (C) 1997 Elsevier Science S.A.