POWER MOS DEVICES - STRUCTURE EVOLUTIONS AND MODELING APPROACHES

In this survey paper, the historical evolution of power MOS transistor structures is presented and mostly used actual devices are described. General considerations on current and voltage capabilities are discus sed and configuration of popular structures is given. It then presents a synthesis of different modelling approaches proposed in recent year s. These include analytical solutions for basic electrical parameters, e.g. threshold voltage, on resistance, saturation and quasi-saturatio n effects, temperature impact and voltage handling capability. The num erical solutions of basic semiconductor devices are then briefly descr ibed along with some typical problems which can be solved this way. Th e compact circuit modelling method is finally explained with emphasis on dynamic behaviour modelling. Physical numerical models are detailed together with those intended for circuit simulation. A fairly exhaust ive bibliography is given for completeness. (C) 1995 IEEE. Published b y Elsevier Science Ltd.