ANALYTICAL EXPRESSIONS FOR THE TUNNEL CURRENT AT ABRUPT SEMICONDUCTOR-SEMICONDUCTOR HETEROJUNCTIONS

Authors
SEARLES S PULFREY DL KLECKNER TC
Citation
S. Searles et al., ANALYTICAL EXPRESSIONS FOR THE TUNNEL CURRENT AT ABRUPT SEMICONDUCTOR-SEMICONDUCTOR HETEROJUNCTIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1851-1856
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
11
Year of publication
1997
Pages
1851 - 1856
Database
ISI
SICI code
0018-9383(1997)44:11<1851:AEFTTC>2.0.ZU;2-R
Abstract
Analytical expressions for the tunnel current in abrupt semiconductor heterojunctions are derived. These expressions, which give results in good agreement with numerical calculations, should prove helpful in th e construction of compact models for devices in which tunneling is imp ortant.