A UNIFIED APPROACH TO PROFILING THE LATERAL DISTRIBUTIONS OF BOTH OXIDE CHARGE AND INTERFACE STATES IN N-MOSFETS UNDER VARIOUS BIAS STRESS CONDITIONS

A new and accurate technique that allows the simultaneous determinatio n of the spatial distributions of both interface states (N-it) and oxi de charge (Q(ox)) will be presented. The gated-diode current measureme nt in combination with the gate-induced drain leakage (GIDL) current w ere performed to monitor the generation of both N-it and Q(ox) in n-MO SFET's. A special detrapping technique and simple calculations have be en developed, from which the spatial distributions of both N-it and Q( ox) under various bias stress conditions, such as the hot-electron str ess (I-G,I-max), I-B,I-max, and hot-hole stresses, can be determined. The calculation of gated-diode current by incorporating the extracted profiles of N-it and Q(ox) has been justified from numerical simulatio n. Results show very good agreement with the experimental results. The extracted interface damages for hot-electron and hot-hole stresses ha ve very important applications for the study of hot-carrier reliabilit y issues, in particular, on the design of flash EPROM, (EPROM)-P-2 cel ls since the above stress conditions, such as the I-G,I-max and hot-ho le stress, are the major operating conditions for device programming a nd erasing, respectively.