CHARACTERISTICS OF SOI FETS UNDER PULSED CONDITIONS

A system for measuring output characteristics of FET's using nanosecon d pulses, instead of de voltage and current measurement, is described. The measurement system is used to obtain the I-V characteristics of s ilicon-on-insulator (SOI) FET's without the degradation resulting from self heating. Use of the technique to study partially depleted SOI FE T's with floating bodies shows that under pulsed conditions, their out put curves have a history dependence. The physical mechanisms responsi ble for the history dependence are explained. Further understanding of the physical mechanisms is given by examination of single-shot pulse measurements. The role of transient and time-dependent phenomena in de termining I-V curves is elucidated.