Jd. Hwang et al., IMPROVING BREAKDOWN VOLTAGE OF SIC SI HETEROJUNCTION WITH GRADED STRUCTURE BY RAPID THERMAL CVD TECHNOLOGY/, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2029-2031
A novel graded process has been developed to improve the characteristi
cs of SiC/Si heterojunction diode (HJD) by rapid thermal chemical vapo
r deposition (RTCVD). The graded process was obtained by varying the f
low of C3H8 gas from 0-10 seem with a ramp rate of 2 sccm/min. The dev
eloped SiC/Si heterojunction diodes exhibit good rectifying properties
, At forward bias, the built-in voltage of 0.63 V and excellent ideali
ty factor n 1.28 were obtained by C-V and I-V measurements, respective
ly, For reverse bias, the breakdown voltage more than 16 V with low le
akage current density Is 3.74 x 10(-4) A/cm(2) at 16.2 V reverse bias,
Additionally, the SEM and TEM cross section have been employed to evi
dence that the graded method has a better SiC/Si interface than the co
nventional carbonization process.