FABRICATION OF N-N ISO-TYPE DIODES WITH LPCVD-GROWN POLYSILICON ON SILICON STRUCTURES()

We report the results of fabricating low cut-in voltage, n(+)-n iso-ty pe diodes using in situ phosphorus-doped polysilicon films on n-type S i substrates, The electrical characteristics of these structures show exponential current-voltage (I-V) behavior, The temperature dependence of the current is used to extract the energy barrier at the film-subs trate interface, The formation of the energy barrier is assumed to be due to the presence of energy states at the polysilicon-substrate inte rface, A simple phenomenological model, which takes into account the i nterface charge, is presented to explain the formation of the energy b arrier, An energy barrier height of about 0.18 eV Is extracted from th e results of I-V characteristics at different ambient temperatures.