A. Neviani et al., HOT-CARRIER DEGRADATION AND OXIDE CHARGE BUILDUP IN SELF-ALIGNED ETCHED-POLYSILICON NPN BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2059-2063
The aim of this work is to present the results of several accelerated
tests performed on self-aligned, etched-polysilicon, npn bipolar trans
istors with silicon dioxide emitter spacers, and to propose a new tech
nique for the characterization of the electric field at the periphery
(that is, at the interface between silicon and the silicon dioxide spa
cer) of the base-emitter junction, Tests are performed reverse-biasing
at constant current the base-emitter junction (with floating collecto
r) both in the tunneling and avalanche regime, The results are found t
o be in good agreement with existing degradation models, and show that
degradation kinetics may depend to some extent on device layout, part
icularly in avalanche regime, The influence of charge injection in the
oxide on degradation kinetics is also analyzed and compared to the pr
edictions of an existing model, To this aim, a new method for estimati
ng charge injection in the oxide is proposed; the method consists in e
valuating the decrease of the electric field at the periphery of the d
evice by measuring the temperature dependence of the tunneling compone
nt of reverse base current. The electric field behavior is then compar
ed to the degradation dependence on stress time in the different stres
s regimes.