A 30-GHZ F(T) QUASI-SELF-ALIGNED SINGLE-POLY BIPOLAR TECHNOLOGY

In this paper, we report the state-of-the-art results obtained in quas i-self-aligned (QSA) single polysilicon NPN bipolar transistors fabric ated within a low-complexity 0.5-mu m CMOS process, Our devices demons trate nearly ideal static characteristics and very good frequency perf ormance, In fact, the obtained 30-GHz maximum f(T) and 4.1 V breakdown voltage are comparable to the best reported results for single-poly s elf-aligned (SA) transistors. Some details of the technological proces s as well as statistical measurements performed on the different optim ization splits are presented, The f(T) and f(max) on-wafer high-freque ncy measurements will be discussed in terms of reproducibility, sensit ivity to process parameters, and device geometry.