DIAGNOSTIC-TECHNIQUE FOR PROJECTING GATE OXIDE RELIABILITY AND DEVICERELIABILITY

This study presents a diagnostic technique for projecting gate oxide r eliability and device reliability from the correlation among four kind s of lifetime prediction methods which are experimentally characterize d by TDDB, F-N degradation, SILC and hot carrier degradation, It has b een found that there exists close correlation between gate oxide degra dation and device degradation. Therefore, this technique can be used t o evaluate how much the process induced degradation of gate oxide effe cts on the device degradation, (C) 1997 Published by Elsevier Science Ltd.