A. Narr et A. Lill, LIFETIME PREDICTION FOR PMOS, AND NMOS DEVICES BASED ON A DEGRADATIONMODEL FOR GATE-BIAS-STRESS, Microelectronics and reliability, 37(10-11), 1997, pp. 1433-1436
The degradation behaviour of PMOS and NMOS devices after Gate-Bias-str
ess (GB-stress) was investigated. The observed saturation current decr
ease of p-channel devices after GB-stress is due to field-induced gene
ration of interface states. The decrease of saturation current of n-ch
annel devices after GB-stress can be interpreted by trapped electrons,
which are tunneling from the substrate into the gate oxide. Based on
the experimental lifetime results at stress conditions extrapolation m
odels were formulated which allow the determination of lifetime after
GB-stress both for n- and p-channel devices at real operation conditio
ns. (C) 1997 Elsevier Science Ltd.