DIRECT PARAMETER EXTRACTION FOR HOT-CARRIER RELIABILITY SIMULATION

Authors
MINEHANE S HEALY S OSULLIVAN P MCCARTHY K MATHEWSON A MASON B
Citation
S. Minehane et al., DIRECT PARAMETER EXTRACTION FOR HOT-CARRIER RELIABILITY SIMULATION, Microelectronics and reliability, 37(10-11), 1997, pp. 1437-1440
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1437 - 1440
Database
ISI
SICI code
0026-2714(1997)37:10-11<1437:DPEFHR>2.0.ZU;2-6
Abstract
This work describes the application of a novel direct parameter extrac tion strategy for the BSIM3v3 MOSFET model to the hot-carrier reliabil ity simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a mini mum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evoluti on can be examined. (C) 1997 Elsevier Science Ltd.