AN ON-WATER TEST STRUCTURE TO MEASURE THE EFFECT OF THERMALLY-INDUCEDSTRESS ON SILICON DEVICES

Authors
HADDAB Y MANIC D POPOVIC RS
Citation
Y. Haddab et al., AN ON-WATER TEST STRUCTURE TO MEASURE THE EFFECT OF THERMALLY-INDUCEDSTRESS ON SILICON DEVICES, Microelectronics and reliability, 37(10-11), 1997, pp. 1441-1444
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1441 - 1444
Database
ISI
SICI code
0026-2714(1997)37:10-11<1441:AOTSTM>2.0.ZU;2-1
Abstract
We have developed a new on-wafer test structure to monitor the effect of stress on the electrical properties of semiconductor devices. We ha ve fabricated this structure on two wafers with different oxygen conce ntrations. We show that we can directly relate the effect of thermally -induced stress to the oxygen concentration in the wafer by means of s imple electrical parameters measurement. This simple measurement techn ique appears to be very sensitive to small variations of stress fields in silicon devices. (C) 1997 Elsevier Science Ltd.