IMPROVING THE ESD PERFORMANCE OF INPUT PROTECTION CIRCUITS IN RETROGRADE WELL AND STI STRUCTURES

Authors
PARK YK KANG TH CHOI CH KONG JT LEE SH
Citation
Yk. Park et al., IMPROVING THE ESD PERFORMANCE OF INPUT PROTECTION CIRCUITS IN RETROGRADE WELL AND STI STRUCTURES, Microelectronics and reliability, 37(10-11), 1997, pp. 1461-1464
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1461 - 1464
Database
ISI
SICI code
0026-2714(1997)37:10-11<1461:ITEPOI>2.0.ZU;2-D
Abstract
We investigate the current transport characteristics of input protecti on devices using LOCOS and STI structures in the retrograde well. We s how that the carriers flow through the concave well doping region betw een the field and well doping areas in the retrograde well. In the STI structure, the current path in the substrate is restricted to the reg ion adjacent to the STI boundary. (C) 1997 Elsevier Science Ltd.