HBM, non-socketed and socketed CDM testing were performed on HF-ICs. B
y applying HBM and non-socketed CDM stress weak pins were located by s
elective stress. Socketed CDM, however, caused a damage at the weak pi
ns, even when they were excluded from testing. Socketed and non-socket
ed CDM caused the same electrical failure signature. After insulating
the weak pins from the tester circuitry, these pins survived the socke
ted CDM test without damage and the failure threshold increased. This
behaviour is explained by the discharge of the parasitic tester capaci
tance through the weak pins, while other pins are tested. (C) 1997 Els
evier Science Ltd.