INFLUENCE OF ARC CAPPING LAYER ON STRESS-INDUCED VOIDING IN NARROW ALCU METALLIZATIONS

Authors
ARNAUD L MARIOLLE D MOREAU P ULMER L
Citation
L. Arnaud et al., INFLUENCE OF ARC CAPPING LAYER ON STRESS-INDUCED VOIDING IN NARROW ALCU METALLIZATIONS, Microelectronics and reliability, 37(10-11), 1997, pp. 1487-1490
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1487 - 1490
Database
ISI
SICI code
0026-2714(1997)37:10-11<1487:IOACLO>2.0.ZU;2-7
Abstract
The influence of capping layer composition was examined in accelerated stress-migration performance of AlCu(0.5%) narrow stripe lines. Using resistance monitoring and Scanning Electron Microscopy, we determined that metallisation with bilayer Ti/TiN ARC top layer induced more str ess voiding than metallisation with single TiN ARC layer. These experi mental results are discussed on the basis of a void growth mechanism p rovided by diffusion at the interface between AlCu and ARC top layer. (C) 1997 Elsevier Science Ltd.