EARLY RESISTANCE CHANGE AND STRESS ELECTROMIGRATION MODELING IN ALUMINUM INTERCONNECTS/

Authors
PETRESCU V MOUTHAAN AJ SCHOENMAKER W
Citation
V. Petrescu et al., EARLY RESISTANCE CHANGE AND STRESS ELECTROMIGRATION MODELING IN ALUMINUM INTERCONNECTS/, Microelectronics and reliability, 37(10-11), 1997, pp. 1491-1494
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1491 - 1494
Database
ISI
SICI code
0026-2714(1997)37:10-11<1491:ERCASE>2.0.ZU;2-W
Abstract
A complete description for early resistance change and two dimensional simulation of mechanical stress evolution in confined Al interconnect s, related to the electromigration, is given in this paper. The model, combines the stress/vacancy concentration evolution with the early re sistance change of the Al line, that could be [1] a fast technique for prediction of the MTF of a line compared to the conventional (acceler ated) tests. (C) 1997 Elsevier Science Ltd.