TEMPERATURE AND THERMAL-CONDUCTIVITY MODES OF SCANNING PROBE MICROSCOPY FOR ELECTROMIGRATION STUDIES

Citation
A. Buck et al., TEMPERATURE AND THERMAL-CONDUCTIVITY MODES OF SCANNING PROBE MICROSCOPY FOR ELECTROMIGRATION STUDIES, Microelectronics and reliability, 37(10-11), 1997, pp. 1495-1498
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1495 - 1498
Database
ISI
SICI code
0026-2714(1997)37:10-11<1495:TATMOS>2.0.ZU;2-A
Abstract
We report here the use of Scanning Probe Microscopy (SPM) in two therm al modes, as well as the usual topographical mode, for the study of sa mples which have suffered electromigration damage. The temperature mod e displays hot spots in the samples, under current bias, where there i s a large void in the track and hence large local heating. The thermal conductivity mode can detect large voids in the track even beneath a passivation layer. (C) 1997 Elsevier Science Ltd.