ANALYSIS OF THE EVOLUTION OF THE TRAPPED CHARGE-DISTRIBUTIONS IN 10NMSIO2-FILMS DURING DC AND BIPOLAR DYNAMIC STRESS

Authors
RODRIGUEZ R NAFRIA M SUNE J AYMERICH X
Citation
R. Rodriguez et al., ANALYSIS OF THE EVOLUTION OF THE TRAPPED CHARGE-DISTRIBUTIONS IN 10NMSIO2-FILMS DURING DC AND BIPOLAR DYNAMIC STRESS, Microelectronics and reliability, 37(10-11), 1997, pp. 1517-1520
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1517 - 1520
Database
ISI
SICI code
0026-2714(1997)37:10-11<1517:AOTEOT>2.0.ZU;2-T
Abstract
The trapped charge distributions in oxides subjected to static and dyn amic stress conditions have been measured. The DC distributions have b een related to the oxide reliability and explained in terms of a micro scopic degradation model. These results are extrapolated to the dynami c case. (C) 1997 Elsevier Science Ltd.