TRANSIENT STRESSING AND CHARACTERIZATION OF THIN TUNNEL OXIDES

Authors
CIAPPA M NAITANA A VANZI M
Citation
M. Ciappa et al., TRANSIENT STRESSING AND CHARACTERIZATION OF THIN TUNNEL OXIDES, Microelectronics and reliability, 37(10-11), 1997, pp. 1525-1528
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1525 - 1528
Database
ISI
SICI code
0026-2714(1997)37:10-11<1525:TSACOT>2.0.ZU;2-M
Abstract
A novel experimental technique for charge trapping characterization of tunnel oxide MOS capacitors is described which reproduces the high Fo wler-Nordheim transient injection levels encountered in real EEPROM ce ll operation. This emulation of the memory cell function provides furt hermore a way to precisely measure the trapped charge density. (C) 199 7 Elsevier Science Ltd.