A HIGH-RESOLUTION METHOD FOR MEASURING HOT-CARRIER DEGRADATION IN MATCHED TRANSISTOR PAIRS

Authors
DREESEN R DECEUNINCK W DESCHEPPER L GROESENEKEN G
Citation
R. Dreesen et al., A HIGH-RESOLUTION METHOD FOR MEASURING HOT-CARRIER DEGRADATION IN MATCHED TRANSISTOR PAIRS, Microelectronics and reliability, 37(10-11), 1997, pp. 1533-1536
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1533 - 1536
Database
ISI
SICI code
0026-2714(1997)37:10-11<1533:AHMFMH>2.0.ZU;2-G
Abstract
A new measurement methodology has been developed in order to perform h igh-resolution measurements of the hot carrier degradation on MOSFET's . With this methodology, degradations as low as 0.01% can be measured accurately. The high resolution measurements are necessary for measuri ng hot carrier degradation in matched transistor pairs. This is demons trated by comparing the degradation at different stress conditions. A linear extrapolation is not applicable when extrapolating the degradat ion curves from 1% to 100 ppm. (C) 1997 Elsevier Science Ltd.