MICROSTRUCTURAL AND SURFACE EFFECTS ON ELECTROMIGRATION FAILURE-MECHANISM IN CU INTERCONNECTS

Authors
GLADKIKH A KARPOVSKI M PALEVSKI A
Citation
A. Gladkikh et al., MICROSTRUCTURAL AND SURFACE EFFECTS ON ELECTROMIGRATION FAILURE-MECHANISM IN CU INTERCONNECTS, Microelectronics and reliability, 37(10-11), 1997, pp. 1557-1560
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1557 - 1560
Database
ISI
SICI code
0026-2714(1997)37:10-11<1557:MASEOE>2.0.ZU;2-J
Abstract
It is shown that changes in the microstructure of Cu interconnects lea d to qualitative variation in electromigration damage kinetics - from the formation of the open circuit to continuous damage not leading to failure. Surface diffusion acting simultaneously with grain boundary m ass transport is shown to be critical for damage formation. Activation energy of electromigration was measured to be 0.95 eV. (C) 1997 Elsev ier Science Ltd.