A RELIABILITY STUDY OF TITANIUM SILICIDE LINES USING MICRO-RAMAN SPECTROSCOPY AND EMISSION MICROSCOPY

Authors
DEWOLF I HOWARD DJ RASRAS M LAUWERS A MAEX K GROESENEKEN G MAES HE
Citation
I. Dewolf et al., A RELIABILITY STUDY OF TITANIUM SILICIDE LINES USING MICRO-RAMAN SPECTROSCOPY AND EMISSION MICROSCOPY, Microelectronics and reliability, 37(10-11), 1997, pp. 1591-1594
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1591 - 1594
Database
ISI
SICI code
0026-2714(1997)37:10-11<1591:ARSOTS>2.0.ZU;2-8
Abstract
Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 mu m wide TiSi2 lines. It is demonstra ted for the first time that emission microscopy allows very fast, simp le, non-destructive mapping of the local phase of TiSi2. The results s how that there is a direct correlation between the resistance variatio n of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines. (C) 1997 Elsevier Science Ltd.