LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18-MU-M SI CMOS TRANSISTORS

Authors
BOUTCHACHA T GHIBAUDO G GUEGAN G SKOTNICKI T
Citation
T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18-MU-M SI CMOS TRANSISTORS, Microelectronics and reliability, 37(10-11), 1997, pp. 1599-1602
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1599 - 1602
Database
ISI
SICI code
0026-2714(1997)37:10-11<1599:LNCO0S>2.0.ZU;2-9
Abstract
The characterization of LF noise and RTS fluctuations in 0.18 mu m CMO S devices is presented. it is found that the 1/f noise results from ca rrier number fluctuations for both N and P MOS devices. The slow oxide trap density deduced from the noise data lies around 10(17)/eV/cm(3) in agreement with state-ofthe-art gate oxides. Drain current RTS ampli tude as large as 5-10% have been observed, being somewhat larger than for 0.35 mu m CMOS technology but comparable to those obtained in 0.25 mu m CMOS devices. (C) 1997 Elsevier Science Ltd.