RETARDING EFFECT OF SURFACE BASE COMPENSATION ON DEGRADATION OF NOISECHARACTERISTICS OF BICMOS BJTS

Authors
LLINARES P NIEL S GHIBAUDO G VENDRAME L CHROBOCZEK JA
Citation
P. Llinares et al., RETARDING EFFECT OF SURFACE BASE COMPENSATION ON DEGRADATION OF NOISECHARACTERISTICS OF BICMOS BJTS, Microelectronics and reliability, 37(10-11), 1997, pp. 1603-1606
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1603 - 1606
Database
ISI
SICI code
0026-2714(1997)37:10-11<1603:REOSBC>2.0.ZU;2-1
Abstract
Hot carrier degradation of 1/f noise characteristics of bipolar juncti on transistors is found to be substantially reduced by arsenic surface compensation of the base region, in agreement with former reports on the improvement in reliability of such devices, inferred from their st atic characteristics studies. (C) 1997 Elsevier Science Ltd.