The capabilities of Scanning Electrical Force Microscopy (SEFM) based
on non-contact AFM (atomic force microscopy) concerning the characteri
zation of microelectronic structures of silicon are presented. Surface
potential differences due to carrier generation and capacitance diffe
rences due to oxide layers are discussed at examples of lateral and cr
oss-sectional images of a resistance and a MOS-structure. (C) 1997 Els
evier Science Ltd.