L. Galateanu, IN-SITU AGING, A DEVELOPMENT OF THE IN-SITU TECHNIQUES FOR BUILDING-IN-RELIABILITY, Microelectronics and reliability, 37(10-11), 1997, pp. 1639-1642
A wafer level in situ accelerated ageing method is proposed. A develop
ment of in situ techniques for building-in approach to reliability is
introduced, because ''in situ'' does not refer to the electrical testi
ng during the ageing but it is referring to the ageing process itself.
A He-Ne laser irradiation of the reverse biased junction is used for
accelerating the local degradation by deep level generation currents -
the hot spots formation. The efficiency of the method for wafer relia
bility monitoring was experimentally proved on RF power transistors. (
C) 1997 Published by Elsevier Science Ltd.