IN-SITU AGING, A DEVELOPMENT OF THE IN-SITU TECHNIQUES FOR BUILDING-IN-RELIABILITY

A wafer level in situ accelerated ageing method is proposed. A develop ment of in situ techniques for building-in approach to reliability is introduced, because ''in situ'' does not refer to the electrical testi ng during the ageing but it is referring to the ageing process itself. A He-Ne laser irradiation of the reverse biased junction is used for accelerating the local degradation by deep level generation currents - the hot spots formation. The efficiency of the method for wafer relia bility monitoring was experimentally proved on RF power transistors. ( C) 1997 Published by Elsevier Science Ltd.