FAILURE-MECHANISM AND SPICE MODELING OF ALGAAS GAAS HBT LONG-TERM CURRENT INSTABILITY/

Authors
LIOU JJ SHEU SH
Citation
Jj. Liou et Sh. Sheu, FAILURE-MECHANISM AND SPICE MODELING OF ALGAAS GAAS HBT LONG-TERM CURRENT INSTABILITY/, Microelectronics and reliability, 37(10-11), 1997, pp. 1643-1650
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1643 - 1650
Database
ISI
SICI code
0026-2714(1997)37:10-11<1643:FASMOA>2.0.ZU;2-K
Abstract
The long-term current instability of AlGaAs/GaAs heterojunction bipola r transistor (HBT) is studied, and the physical mechanism contributing to such a behavior is investigated. Based on this, a model capable of predicting the HBT long-term current drift and mean time to failure ( MTTF) is developed. In addition, such a model is implemented into SPIC E circuit simulator, thus allowing the simulation of HBT circuits subj ected to an electrical and thermal stress condition. (C) 1997 Elsevier Science Ltd.