THERMAL SIMULATION AND CHARACTERIZATION OF THE RELIABILITY OF THZ SCHOTTKY DIODES

Authors
BRANDT M SCHUBLER M PARMEGGIANI E LIN CI SIMON A HARTNAGEL HL
Citation
M. Brandt et al., THERMAL SIMULATION AND CHARACTERIZATION OF THE RELIABILITY OF THZ SCHOTTKY DIODES, Microelectronics and reliability, 37(10-11), 1997, pp. 1663-1666
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1663 - 1666
Database
ISI
SICI code
0026-2714(1997)37:10-11<1663:TSACOT>2.0.ZU;2-B
Abstract
Pulsed stress reliability investigations have been carried out for Pt/ GaAs Schottky diodes. A thermal characterisation of the devices is per formed using a numerical, coupled electrical thermal SPICE simulator. Different degradation mechanisms have been identified and investigated . A comparison between thermal stress and electrical stress shows an i nfluence of the operating current density and the anode diameter on th e device degradation. Analytical calculations, simulation results, and results from the Wunsch-Bell model have been compared. (C) 1997 Elsev ier Science Ltd.