SIC-DIODES FORWARD SURGE CURRENT FAILURE MECHANISMS - EXPERIMENT AND SIMULATION

Authors
UDAL A VELMRE E
Citation
A. Udal et E. Velmre, SIC-DIODES FORWARD SURGE CURRENT FAILURE MECHANISMS - EXPERIMENT AND SIMULATION, Microelectronics and reliability, 37(10-11), 1997, pp. 1671-1674
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1671 - 1674
Database
ISI
SICI code
0026-2714(1997)37:10-11<1671:SFSCFM>2.0.ZU;2-P
Abstract
As predicted earlier theoretically [1], the usual silicon devices forw ard surge current failure n(i)(T)-mechanism should be preceded by mu(T )-(i.e. mobility vs temperature) mechanism in silicon carbide devices. The paper presents experimental results to support this theory. In ad dition, pn-junction voltage drop measurements interpreted by electro-t hermal simulations indicate that nondestructive instant temperatures m ay reach 1600 divided by 1800K in SiC. (C) 1997 Elsevier Science Ltd.