A. Udal et E. Velmre, SIC-DIODES FORWARD SURGE CURRENT FAILURE MECHANISMS - EXPERIMENT AND SIMULATION, Microelectronics and reliability, 37(10-11), 1997, pp. 1671-1674
As predicted earlier theoretically [1], the usual silicon devices forw
ard surge current failure n(i)(T)-mechanism should be preceded by mu(T
)-(i.e. mobility vs temperature) mechanism in silicon carbide devices.
The paper presents experimental results to support this theory. In ad
dition, pn-junction voltage drop measurements interpreted by electro-t
hermal simulations indicate that nondestructive instant temperatures m
ay reach 1600 divided by 1800K in SiC. (C) 1997 Elsevier Science Ltd.