DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING

Citation
G. Meneghesso et al., DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING, Microelectronics and reliability, 37(10-11), 1997, pp. 1679-1682
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
37
Issue
10-11
Year of publication
1997
Pages
1679 - 1682
Database
ISI
SICI code
0026-2714(1997)37:10-11<1679:DOKITO>2.0.ZU;2-C
Abstract
Large decreases in the drain current in the linear and low V-ds region followed by a ''kink'' in the output I-d-V-ds characteristics have be en found after hot electron stress test in AlGaAs/InGaAs/GaAs power ps eudomorphic HEMT's. Decrease in the transconductance measured in linea r region, increase in the drain parasitic resistance and trasconductan ce frequency dispersion have also been observed and attributed to the generation of electron traps in the gate-to-drain access region. (C) 1 997 Elsevier Science Ltd.