G. Meneghesso et al., DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING, Microelectronics and reliability, 37(10-11), 1997, pp. 1679-1682
Large decreases in the drain current in the linear and low V-ds region
followed by a ''kink'' in the output I-d-V-ds characteristics have be
en found after hot electron stress test in AlGaAs/InGaAs/GaAs power ps
eudomorphic HEMT's. Decrease in the transconductance measured in linea
r region, increase in the drain parasitic resistance and trasconductan
ce frequency dispersion have also been observed and attributed to the
generation of electron traps in the gate-to-drain access region. (C) 1
997 Elsevier Science Ltd.