INFLUENCE OF BORON CONCENTRATION ON THE OXIDATION-INDUCED STACKING-FAULT RING IN CZOCHRALSKI SILICON-CRYSTALS

The influence of the boron doping level in the range of 1 x 10(15)-2 x 10(19) cm(-3) on the position of the oxidation-induced stacking fault ring (R-OSF) in silicon crystals has been investigated by experiments and numerical simulation. For low boron-doped crystals, the position of the R-OSF is described by a critical value C-crit defined by the ra tio of the pull rate and the temperature gradient in the crystal at th e solid/liquid interface. Boron concentrations higher-than 10(17) cm(- 3) shift the position of the R-OSF towards the wafer center without ch ange of growth parameters. The critical value C-crit converts into a f unction C-crit(C-B), depending linearly on the boron concentration C-B . Crystal-originated particles (COP) and gate oxide integrity (GOI) yi eld distributions which are consistent with the R-OSF pattern. A low C OP density and a high GOI yield are observed outside the ring; a high COP density and a medium GOI yield in the inner region bordered by the ring. It is assumed that boron atoms modify the thermodynamical prope rties of vacancies and self-interstitials.