RELATIONSHIP BETWEEN GROWN-IN DEFECTS AND THERMAL HISTORY DURING CZ SI CRYSTAL-GROWTH

An abrupt change of the crystal growth rate at temperatures in the ran ge 1150-1080 degrees C affects the annihilation or the agglomeration o f grown-in defects such as flow pattern defects (FPD), crystal origina ted particles (COP), laser scattering defects (LSTD) and the defects m easured by an optical precipitate profiler (OPPDs). Moreover, it is de monstrated that the densities of FPDs and LSTDs correlate with each ot her, and also with the cooling rate in such a temperature range. These relationships were investigated by growing several silicon single cry stals in 10 kinds of hot-zone (HZ) configurations designed by using a numerical simulation. The cooling rate from 1412 degrees C, the meltin g point of silicon, to 1150 degrees C does not seem to be so important for the generation or the annihilation of these defects.