THERMAL SIMULATION OF THE CZOCHRALSKI SILICON GROWTH-PROCESS BY 3 DIFFERENT MODELS AND COMPARISON WITH EXPERIMENTAL RESULTS

Temperatures were measured within an industrial Czochralski silicon pu ller and compared with simulation results. The temperatures were measu red by thermocouples in the crystal along the axis as well as inside t he lateral and bottom insulations. The temperature distribution of the furnace was computed using three different software codes. It could b e demonstrated that today's simulation methods are capable of handling such a complex heat transfer simulation task as that encountered in t he case of Czochralski silicon growth furnaces, with the exception of the melt convection problem, which has not yet been satisfactorily sol ved.