DETAILED MODELING OF 3-DIMENSIONAL CHEMICAL-VAPOR-DEPOSITION

In this paper we investigate computationally a metalorganic chemical v apor deposition reactor. Our model combines a three-dimensional soluti on of the coupled Navier-Stokes/energy equations in a vorticity-veloci ty form, new and accurate multicomponent transport algorithms, and det ailed finite rate chemistry in the gas phase and on the crystal surfac e. We apply a modified Newton method along with efficient Jacobian eva luation and linear algebra procedures in order to obtain a numerical s olution. The present study focuses primarily on film uniformity and ca rbon incorporation levels. Our numerical results show the critical imp ortance of transport modeling for an accurate description of the growt h process. Furthermore, three growth regimes arise as a function of su sceptor temperature: a kinetics-controlled regime at low temperatures, a diffusion-controlled regime at intermediate temperatures, and a des orption-controlled regime at high temperatures. These results are furt her supported by a sensitivity analysis with respect to both gas phase and surface chemistry.