GROWTH-MECHANISM OF PLANAR-TYPE GAAS NANOWHISKERS

Authors
HARAGUCHI K HIRUMA K HOSOMI K SHIRAI M KATSUYAMA T
Citation
K. Haraguchi et al., GROWTH-MECHANISM OF PLANAR-TYPE GAAS NANOWHISKERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1685-1687
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
5
Year of publication
1997
Pages
1685 - 1687
Database
ISI
SICI code
1071-1023(1997)15:5<1685:GOPGN>2.0.ZU;2-S
Abstract
The mechanism for the lateral growth of ultrathin GaAs whiskers is dis cussed in connection with the vapor-liquid-solid growth model. The obs erved growth rate shows that the migration of the source material play s an essential role in such whisker growth. (C) 1997 American Vacuum S ociety. [S0734-211X(97)02705-4].