ELECTRON IRRADIANCE OF CONDUCTIVE SIDEWALLS - A DETERMINING FACTOR FOR PATTERN-DEPENDENT CHARGING

Authors
HWANG GS GIAPIS KP
Citation
Gs. Hwang et Kp. Giapis, ELECTRON IRRADIANCE OF CONDUCTIVE SIDEWALLS - A DETERMINING FACTOR FOR PATTERN-DEPENDENT CHARGING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1741-1746
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
5
Year of publication
1997
Pages
1741 - 1746
Database
ISI
SICI code
1071-1023(1997)15:5<1741:EIOCS->2.0.ZU;2-W
Abstract
Numerical simulations of charging and profile evolution during gate el ectrode overetching in high density plasmas have been performed to inv estigate the effect of long conductive sidewalls on profile distortion (notching). The results reveal that the angle of electron irradiance of the conductive portion of the sidewalls affects profoundly the char ging potential of the gates. Larger angles, obtained for thinner masks and/or thicker polysilicon, result in reduced gate potentials which, through their influence on the local ion dynamics, cause more severe n otching at all lines of the microstructure. (C) 1997 American Vacuum S ociety. [S0734-211X(97)02805-9].