STUDY OF OHMIC CONTACT RESISTANCE TO GA(1-X)IN(X)AS INP COMPOSITE CHANNEL INP HIGH-ELECTRON-MOBILITY TRANSISTORS FOR X=35-PERCENT TO X=81-PERCENT/

Authors
SHEALY JB MATLOUBIAN M LIU T NGO C
Citation
Jb. Shealy et al., STUDY OF OHMIC CONTACT RESISTANCE TO GA(1-X)IN(X)AS INP COMPOSITE CHANNEL INP HIGH-ELECTRON-MOBILITY TRANSISTORS FOR X=35-PERCENT TO X=81-PERCENT/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1773-1774
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
5
Year of publication
1997
Pages
1773 - 1774
Database
ISI
SICI code
1071-1023(1997)15:5<1773:SOOCRT>2.0.ZU;2-B
Abstract
This article reports the performance of alloyed Ohmic contacts to Ga(1 -X)In-(X)As/InP composite channel InP high electron mobility transisto rs for various indium compositions, from X=35% to X=81%. Both strained and pseudomorphic structures were utilized to observe the impact of t he indium concentration on electron mobility, carrier concentration, s heet resistance, and specific contact resistance. The lowest specific contact resistance (Rt<0.16 Ohm mm) was obtained for strained structur es with indium concentrations of 74% and 81%. For strained structures with indium concentrations of 35%, we observe specific contact resista nce of 0.35 Ohm mm. (C) 1997 American Vacuum Society. [S0734-211X(97)0 2105-7].