OXYGEN SOLUBILITY IN SI MELTS - INFLUENCE OF BORON ADDITION

Authors
ABE K MATSUMOTO T MAEDA S NAKANISHI H HOSHIKAWA K TERASHIMA K
Citation
K. Abe et al., OXYGEN SOLUBILITY IN SI MELTS - INFLUENCE OF BORON ADDITION, Journal of crystal growth, 181(1-2), 1997, pp. 41-47
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
181
Issue
1-2
Year of publication
1997
Pages
41 - 47
Database
ISI
SICI code
0022-0248(1997)181:1-2<41:OSISM->2.0.ZU;2-5
Abstract
The influence of boron addition on oxygen solubility in silicon melts has been investigated. It was found that the oxygen concentration incr eases from 2 x 10(18) to 4 x 10(18) atoms/cm(3) with increasing boron concentration in silicon melts from nondoped to 5 x 10(20) atoms/cm(3) . Boron atoms gather oxygen atoms by weak attraction in boron-doped si licon melts. The temperature dependence of oxygen concentration in bor on-doped silicon melts is small and without definition in the experime ntal range investigated.