The influence of boron addition on oxygen solubility in silicon melts
has been investigated. It was found that the oxygen concentration incr
eases from 2 x 10(18) to 4 x 10(18) atoms/cm(3) with increasing boron
concentration in silicon melts from nondoped to 5 x 10(20) atoms/cm(3)
. Boron atoms gather oxygen atoms by weak attraction in boron-doped si
licon melts. The temperature dependence of oxygen concentration in bor
on-doped silicon melts is small and without definition in the experime
ntal range investigated.